Dr Sorin P. Voinigescu (University of Toronto, Ontario, Canada)
Abstract — This paper reviews the technology requirements of future mm-wave systems and the challenges facing mm-wave MOSFET and SiGe HBT device and benchmark circuit scaling below 3nm gate length and beyond 1.5THz fMAX. Measurement results of state-of-the-art MOSFETs, HBTs and circuits are presented from DC to 325 GHz along with scaling simulations of the ITRS SiGe HBT mm-wave benchmark circuits through 220 GHz.
Biography — Sorin P. Voinigescu graduated in 1984 with a M.Sc. degree in Electronics from the Polytechnic Institute of Bucharest, Romania. He received the Ph.D. degree in Electrical and Computer Engineering from the University of Toronto, Canada, in 1994. His Ph.D. dissertation was on the design and fabrication of VLSI compatible Si/SiGe p-MOSFET’s. Between 1984 and 1991 he worked in R&D and in academia in Bucharest, designing and lecturing on microwave semiconductor devices and microwave integrated circuits.
Between 1994 and 2000 he was with NORTEL NETWORKS in Ottawa where he was responsible for projects in high-frequency characterization and statistical scalable compact model development for Si, SiGe and III-V heterostructure devices. He spearheaded the modeling infrastructure development for, and was involved in the prototyping of wireless and broadband fiber optics transceivers in emerging semiconductor technologies.
In April 2000 he co-founded Quake Technologies Inc. an Ottawa-area fabless semiconductor company focussing on the design and fabrication of 10 Gb/s and 40 Gb/s Physical Layer ICs. Quake was acquired by AMCC in 2006. As Chief Technology Officer at Quake he coordinated the access and characterization of Si, SiGe, GaAs and InP technologies, high-frequency package design and electro-optical interface integrated circuits development.
In September 2002 he joined the Electrical and Computer Engineering Department at the University of Toronto where he is a full Professor. His research and teaching interests focus on the modelling, characterization and fabrication of nanoscale and atomic-scale electronic devices and technologies, and on design techniques and circuit topologies for mm-wave DSP, radio, radar and imaging ICs operating in the 50 to 1000-GHz range.
Dr Wen Tong (Huawei Fellow, IEEE Fellow, China)
Abstract — The emerging 5G wireless will have to explore the higher frequency bands to create an unprecedented high capacity mobile network; the opportunities to use mmWave technology for mobile access can achieve fiber-like experience for mobile access in 2020. In this talk, we discuss the challenges of several key aspects for mmWave access: (1) radio propagation characteristics; (2) regulatory of spectrum allocations (3) system architecture and concepts and (4) constraint on the mmWave radio subsystems. The present the progress in 5G mmWave technologies are also presented.
Biography — Dr. Wen Tong is the Huawei Fellow, Head of Huawei Wireless Research, CTO, Huawei Wireless. Prior to joining Huawei in March 2009, Dr. Tong was the Nortel Fellow and global head of the Network Technology Labs at Nortel. He joined the Wireless Technology Labs at Bell Northern Research in 1995. He had pioneered fundamental technologies from 1G to 4G wireless with 350 granted US patents.
Since 2010, Dr. Tong is the vice president of Huawei wireless research. In 2011, He was appointed the Head of Communications Technologies Labs of Huawei, he spearhead to lead Huawei’s 5G wireless research and development.
Dr. Tong was elected as a Huawei Fellow and an IEEE Fellow. In 2014, he was the recipient of IEEE Communications Society Industry Innovation Award for “the leadership and contributions in development of 3G and 4G wireless systems”.
Dr. Tong serves as Board of Director of WiFi Alliance and Board of Director of Green Touch Consortium.